Femtosecond Laser-Induced Crystallization of Amorphous Silicon Thin Films under a Thin Molybdenum Layer

A new process to crystallize amorphous silicon without melting and the generation of excessive heating nearby components is presented. We propose addition a molybdenum layer improve quality laser-induced crystallization over that achieved by direct irradiation alone. The advantages are it allows control crystallite size varying applied fluence near-infrared femtosecond laser. It offers two regimes for nanocrystallization polycrystallization with small large sizes, respectively. high repetition rate compact laser source enables high-quality areas. In this proposed method, multilayer structure irradiated single pulse. includes substrate, target Si coated an additional thin film. crystallized irradiating Mo at different regimes. transfer energy from film causes low temperatures (∼700 K). Numerical simulations were carried out estimate electron lattice using two-temperature model. roles phonon transport inelastic scattering Mo–Si interface considered in confirm experimental evidence was all-solid-state lower than point Si, which consistent results transmission microscopy (TEM) Raman. formation controlled after treatment can lead longer mean free paths carriers increased electrical conductivity.